Structure of dielectric layer in a semiconductor device

반도체소자의절연층구조

Abstract

본 발명은 반도체 소자의 절연층 구조에 관한 것으로, 절연층을 다중(multi) 반사방지막이 산화막 사이에 교호적으로 포함되도록 형성하므로써, 절연층상에 형성되는 감광막 패턴의 형상(profile)을 양호하게 형성할 수 있도록 한 반도체 소자의 절연층 구조에 관한 것이다.
PURPOSE: A structure of an insulating layer in a semiconductor device is provided to form a profile of a photoresist pattern by using an oxide layer and an anti-reflective layer. CONSTITUTION: An insulating layer(100) is formed with an oxide layer(11a,11b) and an anti-reflective layer(12a,12b) in order to form a photoresist pattern stably on the insulating layer(100) by etching a selected portion of the insulating layer(100). The oxide layer(11a,11b) and the anti-reflective layer(12a,12b) are formed alternately in a process of forming the insulating layer(100). An upper layer of the insulating layer(100) is formed with the oxide layer(11a,11b). A lower layer of the insulating layer(100) is formed with the anti-reflective layer(12a,12b).

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